Dr. Michael Beregovsky

Dr. Michael Beregovsky

Academic Background

  • Date:  1968-1974
  • Institute: Moscow Technical University (State Steel & Alloys Institute)
  • Degree: M.Sc.
  • Area of Specialization: Solid State Physics
  • Date:  1992-1996
  • Institute: Technion, Israel Institute of Technology
  • Degree: Ph.D.
  • Area of Specialization:  Materials Science

Previous  Employment

Title: Senior Engineer

  • Date:  2012 – current
  • Institute: Department of Materials and  Science Engineering, Technion, Israel Institute of Technology
  • Research area: Kinetics of formation of metallic nanotubes. Mechanical properties of submicron particles.

Title: Research Fellow

  • Date:  2009 – 2012
  • Institute: Center of Nanotechnology, Department of Electrical Engineering, Technion, Israel Institute of Technology
  • Research area: Research and Development of microelectronic devices based on silicon nanowires and carbon nanotubes.

Title: R&D Group Manager

  • Date:  2008 – 2009
  • Institute: Xenemetrix Ltd., Migdal HaEmek, Israel
  • Research area: Development of advanced software for XRF analyzer; Metrology

Title: Senior Scientist

  • Date:  2001 – 2008
  • Institute: Semi Conductor Devices, P.O.Box 2250/99, Haifa, Israel
  • Research area: Development of Laser Devices Technology, Failure analysis of Laser Devices

Title: Reliability Engineer

  • Date:  1999 – 2001
  • Institute: Tower Semiconductor Ltd, Migdal Haemek, Israel
  • Research area: Electrical testing of electronic devices and statistical analysis of production quality

Title: Physicist

  • Date:  1996 – 1999
  • Institute: Sizary, Material Purification Ltd., Migdal Tefen 24959, Israel
  • Research area: Protection of  silicon wafers from metallic contamination

Title: Research Fellow

  • Date:  1980 – 1989
  • Institute: Institute of High Temperatures, Russian Academy of Sciences, Moscow
  • Research area: Magnetic measurements and physical-chemical characterization of superconductors.

Title: Principle Engineer

  • Date:  1976 – 1980
  • Institute: Scientific Industrial Center “Molnija” Ministry of Aircraft Industry, Moscow
  • Research area: Physical and chemical  analysis of thermal protecting materials.

Title: Engineer

  • Date:  1974 – 1976
  • Institute: Institute of Devices, Scientific Industrial Union “AGROPRIBOR”, Moscow
  • Research area: Mechanical properties of Al-based alloys obtained by vacuum melting.

Selected Publications

  • Beregovsky, I. Levin, A. Berner, and M. Eizenberg; V. Demuth, and H.P. Strunk, “Effect of Impurities on Initial Stages of Phase Formation for the System of Ti Deposited on (001) Si-Ge Layers”, Thin Solid Films, 338, (1999) 110.
  • Beregovsky, A. Klyuch, Y. Raskin, Y. Zinman, Y. Shacham-Diamand, and B. E. Deal, “Protection Of Si Wafers From Alkali Contamination During High Temperature Processing Using Electric Field”, Journal of The Electrochemical Society, Volume 147 (9), (2000), ,3892-3898.
  • Katsman, Y. Yaish, E. Rabkin, M. Beregovsky, “Surface diffusion Controlled Formation of Nickel Silicides in Silicon Nanowires”, J. Electron. Mater., 39, (2010), 365.
  • E. Yaish, A. Katsman, G. M. Cohen, M. Beregovsky, “Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth”, J. Appl. Phys., 109, (2011), 094303.
  • Beregovsky, A. Katsman, E. M. Hajaj, Y. E. Yaish, “Diffusion formation of nickel silicide contacts in SiNWs”, Solid-State Electronics, 80, (2013), 110-117.
  • Katsman, M. Beregovsky, Y. E. Yaish, “Evolution of Nickel Silicide Intrusions in Silicon Nanowires during Thermal Cycling”, J. Appl. Phys., 113, 084305 (2013); doi: 10.1063/1.4792670.
  • Katsman, M. Beregovsky, Y. E. Yaish, “Formation and Evolution of nickel silicides in silicon nanowires”, IEEE Transactions on Electron Devices, 61, (2014), 3363-3371.
  • S. Baylan, G. Richter, M. Beregovsky, D. Amram, E. Rabkin, “The kinetics of hollowing of Ag–Au core–shell nanowhiskers controlled by short-circuit diffusion”, Acta Mater 82 (2015) 145-154.