Dry Etched Periodic Nanopores in GaN and Their Effect on Piezoelectricity
13/07/2025
David Wang Auditorium, 3rd floor Dalia Meidan Bldg.
Gallium nitride (GaN), of the III-N family, is a wide bandgap, high electron mobility and high breakdown field semiconductor material. Moreover, due to its Wurtzite…
Read more