Investigation of Magneto-mechanical Effects in Ni/GaN Schottky Diodes
30/08/2026
אודיטוריום ע"ש דויד וואנג, בניין מידן, קומה 3
Gallium Nitride (GaN) is a wide bandgap semiconductor that also possesses strong piezoelectric properties, which opens the door to electromechanical applications including the unique phenomenon…
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