Ms. Tohar Leibovitz - M.Sc. Candidate
18.08.2024
David Wang Auditorium, 3rd floor Dalia Meidan Bldg.
14:30
Two-dimensional materials exhibit remarkable optical and electrical properties essential for optoelectronic and memory applications. Notably, α-In2Se3 possesses room temperature-intercoupled ferroelectricity in both in-plane and out-of-plane orientations. Recognizing the importance of heterostructures in nanotechnology, the integration of ferroelectric In2Se3 with In2O3 presents a promising avenue for vertical heterostructure-based devices, capable of simultaneous photo sensing and memory functionalities. This study leveraged In2Se3 ferroelectricity for memory operations in conjunction with a P-N junction for photo sensing. Memory functionality was achieved through band structure modulation, inducing distinct resistance states via dipoles reorientation within In2Se3 under different gate voltage conditions. In addition, the P-N junction configuration facilitated efficient and gate modulated photo sensing behavior.
The formation of the heterostructures involved oxidation of In2Se3 to In2O3, studied through O2-plasma and direct laser writing methods. Material characterization, including Raman spectroscopy and dimension analysis via Atomic Force Microscopy and wet etch was conducted to assess the efficacy of each technique. Laser writing, chosen for its precision and localized conversion, was employed for device fabrication. Finally, optoelectronic characterization was conducted under various conditions. The dual functionalities manifested in the research were scrutinized through examination of performance parameters such as memory window, response time, and photoresponsivity.