Mr. Ron Orenstein – M.Sc. Candidate
14/09/2025
David Wang Auditorium, 3rd Floor, Dalia Maydan Bldg.
13:30
Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) provide exceptional precision in controlling film thickness, composition, and conformality at the nanometer scale — a capability that enables tailored functional properties across a wide range of application spectrum, including optics, electronics, and surface protection. In this study, we investigate the growth and stability of ALD-grown Al₂O₃ layers and MLD-grown alucone films, as well as their alternating laminate structures. The structural and chemical stability of these films was evaluated under accelerated degradation conditions involving elevated humidity and temperature, simulating real-world environmental exposure. Furthermore, amorphous TiO₂ thin films were deposited via ALD and subjected to localized laser treatment to induce crystallization. By tuning the number and energy of laser pulses, we explored phase selectivity and spatial control over crystallization on various substrates, with a particular focus on how substrate thermal conductivity influences local heat dissipation and the resulting phase development. This approach demonstrates a pathway to spatially patterned crystallinity in otherwise amorphous metal oxide films, offering potential for site-specific property tuning in advanced devices.