Dry Etched Periodic Nanopores in GaN and Their Effect on Piezoelectricity
13/07/2025
אודיטוריום ע"ש דויד וואנג, בניין מידן, קומה 3
Gallium nitride (GaN), of the III-N family, is a wide bandgap, high electron mobility and high breakdown field semiconductor material. Moreover, due to its Wurtzite…
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