סמינרים עתיד

The microstructure of polymer–fullerene blends critically influences the performance of organic semiconductor devices. Although vapor-phase infiltration (VPI) enables selective staining, quantitative analysis of SEM images…

Gallium nitride (GaN), of the III-N family, is a wide bandgap, high electron mobility and high breakdown field semiconductor material. Moreover, due to its Wurtzite…

Hierarchically porous polymers with micropores (< 2 nm), mesopores (2 to 50 nm) and macropores (>50 nm) combine high specific surface areas (SSAs) with enhanced…

In electromigration, lattice atoms migrate under the influence of electric current; it is considered to be one of the most significant mechanisms responsible for microstructural…