Ms. Maria Badarne - Ph.D. Candidate
05/11/2026
אודיטוריום ע"ש דויד וואנג, בניין מידן, קומה 3
13:30
Quantum technologies are already used for secure communication and hold promise for advanced computing. Superconducting circuits are a leading platform for quantum computation, yet integrating robust memory remains a major challenge. Here, we combine theoretical and experimental approaches to develop superconducting thin-film platforms with integrated memory.
As superconducting films become thinner, their critical temperature decreases, which can be understood in terms of reduction in charge-carrier density [1]. Independently, external electric fields suppress charge-carrier density near the surface. In very thin films, these two effects offer a means of gating superconductivity, which is otherwise difficult to achieve. This mechanism was exploited to demonstrate a quantum device with non-volatile memory using ferroelectric–superconductor heterostructures [2].
Building on this concept, we used a semiclassical Lagrangian approach to propose a Josephson junction with a ferroelectric tunnelling layer sandwiched between thick and thin superconducting electrodes [3]. The combination of tunable ferroelectric polarization and geometric asymmetry was predicted to yield a quantum memristor—a device whose electrical response depends on its history. As an initial step toward realizing this device and preventing latching in Josephson junctions, we demonstrated resistive shunting in planar superconducting devices using electron-beam lithography.
Together, these studies highlight complementary material platforms that pave the way for integrating memory with quantum circuits and facilitating interfaces between quantum and classical computing.
[1] Ivry et al., Phys. Rev. B 90, 214515 (2014).
[2] Suleiman et al., Appl. Phys. Lett. 119, 112601 (2021).
[3] Badarne et al., Phys. Rev. Research 7, 043234 (2025).