יום חמישי, ה 16- במרץ 2023 בשעה 14:30
באודיטוריום ע"ש דויד וואנג, בניין מידן, קומה 3
Asst. Prof. Deep Jariwala
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
\The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode and tunnel junction devices based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS2/AlScN, and introduce our work on Ferroelectric Diode (FeD) devices also based on thin AlScN. In addition, I will also present how FeDs provide a unique advantage in compute-in-memory (CIM) architectures for efficient storage, search as well as hardware implementation of neural networks.
If time permits, I will also cover the subject of strong light-matter coupling in excitonic 2D semiconductors, including formation of hybrid states in multilayers and superlattices. I will further present our recent work on giant linear dichroism in layered anti-ferromagnetic semiconductor FePS3 as well as scalable, localized quantum emitters from strained 2D semiconductors.