Mr. Edi Maizenberg - M.Sc. Candidate
07/06/2026
אודיטוריום ע"ש דויד וואנג, בניין מידן, קומה 3
13:30
Small band-gap semiconductors are attractive for infrared optoelectronic applications, yet their performance is often limited by high thermal recombination rates and low carrier mobility. Heterostructure engineering provides a powerful approach to probe and control interfacial processes governing carrier transport and recombination in such systems. In this context, we investigate micron-scale planar heterostructures composed of Lead Sulfide (PbS) and Cesium Lead Halide Perovskites (CsPbX₃, X=Cl,Br,I), grown directly on PbS. This approach interfaces a narrow band-gap absorber with a wide band-gap semiconductor, known for efficient optoelectronic properties, but more importantly provides a simple and reliable scheme to tune the perovskite band gap through halide composition.
In this seminar, I will present a method to grow Lead Sulfide-Perovskite heterostructures via Chemical Vapor Deposition (CVD) for the first time. This method, which yields highly faceted single-crystal perovskites, allows structure-function characterization, which points towards controlled phase formation at the interface, accompanied by interfacial strain effects. On top of these structural variations, pronounced spatial differences exist in the optical response, but can be revealed only by cathodoluminescence (CL) due to the optical diffraction limit. The heterostructures ultimate tunability via halide composition is also demonstrated, which together with current-based measurements positions the developed planar junction as a model platform for studying structure-property relationships in hybrid-perovskite systems for designing future optoelectronic devices.