Dr. Eilam Yalon
Department of Electrical Engineering, Stanford University
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Conversely, the operation of several emerging memory technologies relies on self-heating (e.g. phase-change or ionic motion). These “two sides of the same coin” highlight the need for better understanding energy dissipation mechanisms in future nanoscale devices. In this talk I will discuss two classes of emerging technologies: memristive devices based on phase-change materials (PCM), and transistors based on two-dimensional (2D) materials. I will demonstrate how electrical and thermal interfaces dominate the energy consumption in PCM devices and limit the performance of transistors based on 2D materials. Thermal interfaces are characterized using Raman thermometry, which enables simultaneous measurements of the device layer and its substrate, yielding unprecedented resolution in the “vertical” direction of heat flow and making it ideal to study energy dissipation at interfaces. Overall, these results provide new insights and pave the way towards energy-efficient future electronics.