Emerging devices based on silicon nanowires, 2D materials and/or high-k dielectrics for nanoelectronics, spintronics, and neuroelectronics

David Wang Auditorium, 3rd floor Dalia Maydan Bldg.
Prof. Marco Fanciulli

Prof. Marco Fanciulli

Department of Materials Science, University of Milano Bicocca,
Milano, Italy

Silicon nanowires (SiNWs) have been extensively investigated in the last decades. The interest in these nanostructures stems from both fundamental and applied research motivations. The
functional properties of one-dimensional silicon structures are significantly different, at least below a certain critical dimension, from those well known in the bulk. The continuous down-scaling of
conventional nano-electronic devices, driven by Moore’s law, and the search for novel and more efficient functionalities, motivated by the need to open up new horizons for the mature silicon
technology, led to the production, characterization, and exploitation of silicon structures with typical dimensions in the nanometer range. The key and peculiar functional properties of SiNWs find
applications in nanoelectronics, classical and quantum information processing and storage, spintronics, optoelectronics, photovoltaics, thermoelectrics, battery technology, nanobiotechnology,
and neuroelectronics. Two-dimensional transition metal di-chalcogenides (2DTMDCs) are an intriguing class of emerging materials. Their ultrathin body, optical band gap, and
unusual spin and valley polarization physics make them very promising candidates for a vast range of conventional and emerging applications. High-k dielectrics development during the last 15 years, motivated by the scaling of MOSFETs, was found to be relevant in many other application areas. The realization and investigation of core-shell heterostructures, in particular the integration of 2D materials and/or high-k dielectrics on 1D nanostructures, are still largely unexplored and a vigorous research effort in this area seems appropriate considering the potential outcomes in terms of material science, physics, and technology.

I will review our most relevant recent results in the fabrication of SiNWs and growth of 2DTMDCs and high-k dielectrics, and of their characterization based on a variety of structural, morphological, chemical, physical, and electrical techniques. Preliminary results and the realization and characterization of core-shell heterostructures will be also reported.