Assoc. Prof. Shlomo Berger

Shlomo Berger
Meidan, 607

  • B.Sc. 1983 (Technion)
  • D.Sc. 1990 (Technion)

After receiving his doctorate, Assoc. Prof. Berger spent two years as a research associate in the Department of Materials Science & Engineering at the Technion, and one year as a Rothchild research fellow in the Division of Applied Science at Harvard University. In addition, he carried out research at Battelle Frankfurt for three months. In 1993 he joined the Department of Materials Sience & Engineering at the Technion.


The main interest of our group is dielectric nano-composite thin films. The films consist of a highly dense array (1010-11/cm2) of crystals grown inside alumina pores. The pores have an average diameter between 20nm and 60nm and length between 100nm and 50mm. The pores are prepared by electrochemical anodization of pure aluminum films and oriented in-vertical to the film plane. Non-linear dielectric crystals were grown inside the alumina nano-pores with preferred crystallographic orientation along the longitudinal axis of the pores. In some cases the preferred crystallographic orientation is the polar axis. The preparation of the alumina porous film and growth of the crystals inside the nano-pores is carried out in our laboratory.


The major research work is focused on studying and correlating the microstructure, chemical composition and dielectric properties of the crystals inside the alumina nano-pores. Our recent study reported a detection of low mechanical pressures, as low as 1Pa, by piezoelectric nano-crystals.