InGaN/GaN quantum wells by Molecular Beam Epitaxy at ICAP

events hall

Dr. Ofer Sinai


David Wang Auditorium, 3rd floor Dalia Meidan Bldg.


Epitaxially grown semiconductors from the III-N family are important both technologically and scientifically, with applications to efficient lighting (common LEDs), power electronics, UV light sources and lasers, UV and IR detectors, next-generation display technology, tandem photovoltaic cells, and more. In(x)Ga(1-x)N with different compositions possesses direct bandgaps with energies from 3.51 eV (near UV) to 0.7 eV (short-wave IR), straddling the entire visible spectrum.

Epitaxial growth can be performed with a sub-nm degree of precision using molecular beam epitaxy (MBE), which also enables access to the full range of InGaN compositions (as opposed to alternative epitaxial methods). Since mid-2019, the Israel Center for Advanced Photonics (ICAP) has been performing epitaxy of III-Nitrides as well as other III-V semiconductors, using both MBE and metal-organic vapor phase epitaxy (MOVPE), as part of its mission statement to provide R&D services to academic and industrial customers in Israel and abroad. In this talk I will present some recent results obtained from the III-N MBE machine at ICAP, demonstrating the growth of high-In InGaN and precise, repeatable epitaxy of InGaN-in-GaN multiple and single quantum wells (QWs). I will also describe shutter-modulated techniques used to grow both bulk InGaN and GaN and InGaN/GaN QWs, detailing considerations made during their development.

Host: Asst. Prof. Yonatan Calahorra