Electronic modulation of inter-coupled ferroelectricity in 2D α-In2Se3 and its effect on 2D based heterostructure Fe-FETs

events hall

Mr. Debopriya Dutta PhD candidate


David Wang Auditorium, 3rd floor Dalia Meidan Bldg.


Ferroelectricity in two-dimensional (2D) materials has been at the forefront of recent research owing to its potential application in low-powered non-volatile phase-change memory, energy harvesting, strain tuned electronics, artificial brain, etc. Among the 2D materials exhibiting ferroelectricity at room temperature, α-In2Se3 stands out owing to the presence of both in-plane (IP) and out-of-plane (OOP) dipole polarization. In addition, the ability to modulate IP by switching OOP and vice versa owing to their intercoupled nature make it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field modulation of the optoelectronic properties in α-In2Se3 based field effect devices1. Gate-dependent surface potential measurements using Kelvin Probe Force Microscopy (KPFM) were used in In2Se3-based devices to directly reveal the bi-directional dipole modulation. Such electric control has been further utilized to obtain multibit non-volatile memory and logic operations using optoelectronic inputs in monolithic In2Se3-In2O3 heterojunctions2,3. Additionally, multilevel (opto)-electronic response in 2D α-In2Se3-MoS2 based ferroelectric-semiconducting heterostructure devices has also been achieved by selective poling via the gate terminal4.


Debopriya completed his Bachelor in Science (Physics) from the University of Calcutta, India. After finishing his Master in Science (Physics) from the University of Hyderabad, India, he joined Technion – Israel Institute of Technology as a Ph.D. candidate under the supervision of Dr. Elad Koren in Oct 2018.

Supervisor: Asst. Prof. Elad Koren