Dr. Fei Hui
Two-dimensional (2D) materials with atomic thin layer are attractive for the fabrication of advanced solid-state electronic devices due to their extraordinary properties (e.g. high mechanical strength, high electrical and thermal conductivity), and the development of scalable synthesis methods. The introduction of 2D layered materials in the structure of microelectronic devices is a promising strategy to enhance and extend their performance. In this seminar, I will present my work on the introduction of graphene and hexagonal boron nitride (h-BN) in different electronic devices and their nanoelectronic characterizations by scanning probe microscopy (SPM). First. I will introduce a cost-efficient methodology to fabricate graphene-coated nanoprobes for atomic force microscopes, which show enhanced lifetime and performance (low variability and high reliability) compared to conventional nanoprobes. Second, I will talk about the use of monolayer and multilayer h-BN as dielectric for electronic devices, mainly focus on the synthesis of the h-BN using chemical vapor deposition (CVD), the study of its intrinsic morphological and electrical properties (dielectric breakdown, electrical homogeneities, etc.) locally, as well as its performance as dielectric in memristors. Finally, I will briefly talk about my future research related to the use of 2D materials (e.g. graphene oxide) for building high-density electronic memories.