Publications

  1. Oren Zonensain, Sivan Fadida, Ilanit Fisher, Juwen Gao, Michal Danek, and Moshe Eizenberg, “Thermal Stability of Atomic Layer Deposited WCxNy Electrodes for Metal Oxide Semiconductor Devices”, J. Appl. Phys. 123, (2018), 035101.
  2. Matthew Kwan, Roy Winter, P. Mutin, Moshe Eizenberg, and Ganpati Ramanath, “Tailoring Al-SiO2 Interfacial Work Function Using an Organophosphonate Nanolayer”, Appl. Phys. Letts. 111, (2017),121602.
  3. Nadiia Kolomiiets, Valery V Afanas’ev, Andre Stesmans, Sivan Fadida and Moshe Eizenberg, “Metal- and Oxide-Related Hydrogen-Induced Dipoles at the Pt/HfO2 Interface”, Microelectronic Engineering, 178, (2017), 304.
  4. Igor Krylov, Dan Ritter and Moshe Eizenberg, “HfxAlyO Ternary Dielectrics for InGaAs Based Metal-Oxide-Semiconductor Capacitors”, J. Appl. Phys. 122, (2017), 034505.
  5. Iacopetti, P. Shekhter, R. Winter, T. C. U. Tromm, J. Schubert and M. Eizenberg, “The Asymmetric Band Structure and Electrical Behavior of the GdScO3/GaN System”, J. Appl. Phys. 121, (2017), 205303.
  6. F. Palumbo, R. Winter, K. Tang, P. C. McIntyre, and M. Eizenberg, “Investigation of Stress Induced Interface States in Al2O3/InGaAs Metal-Oxide-Semiconductor Capacitors”, J. Appl. Phys. 121, (2017), 174105.
  7. Roy Winter, Matthew Kwan, P. Mutin, Ganpati Ramanath, and Moshe Eizenberg, “Chemical Bonding and Nanomolecular Length Effects on Work Function at Au-Organophosphonate-HfO2 Interfaces”, Appl. Phys. Letts. 110, (2017), 181604.
  8. Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter, “Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures”, IEEE Transactions on Electron Devices, 64, (2017) 1642.
  9. Felix Palumbo, Sebastian Pazos, Fernando Aguirre, Roy Winter, Igor Krilov, and Moshe Eizenberg, “Temperature Dependence of Trapping Effects in Metal Gates / Al2O3/ InGaAs Stacks”, Solid State Electronics, 132, (2017), 12.
  10. Avi Shriki, Roy Winter, Yonatan Calahorra, Yaron Kauffmann, Guy Ankonina, Moshe Eizenberg, and Dan Ritter, “Formation Mechanism of Gold-based and Gold-free Ohmic Contacts to GaN HFETs”, J. Appl. Phys. 121, (2017), 065301.
  11. Igor Krylov, Boaz Pokroy, Dan Ritter, and Moshe Eizenberg, “The Passivation of InGaAs Interface States by Thin AlN Interface Layers for Metal-Insulator-Semiconductor (MIS) Applications”, J. Vac. Sci. Technol. B, 35, (2017), 011205.
  12. Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter, “The Role of Barrier Transport and Traps in the Trade-off between Low Off-State Leakage Current and Improved Dynamic Behavior of AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, 63, (2016), 4702.
  13. F. Aguirre, S. Pazos, F.R.M. Palumbo, S. Fadida, R. Winter, and M. Eizenberg, “Effect of Forming Gas Annealing on the Degradation Properties of Ge-based MOS Stacks”, J. Appl. Phys. 123, (2018), 134103.
  14. Roy Winter, Pini Shekhter, Kechao Tang, Luca Floreano, Alberto Verdini, Paul McIntyre, and Moshe Eizenberg, “Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface”, ACS Applied Materials & Interfaces, 8, (2016), 16979.
  15. Igor Krylov, Boaz Pokroy, Moshe Eizenberg, and Dan Ritter, “A Comparison between HfO2/Al2O3 Nano-laminates and HfxAlyO as the Dielectric Material in InGaAs Based Metal-Oxide-Semiconductor (MOS) Capacitors”, J. Appl. Phys. 120, (2016), 124505.
  16. Igor Krylov, Boaz Pokroy, Moshe Eizenberg, and Dan Ritter, “A Comparison between HfO2/Al2O3 Nano-laminates and HfxAlyO as the Dielectric Material in InGaAs Based Metal-Oxide-Semiconductor (MOS) Capacitors”, J. Appl. Phys. 120, (2016), 124505.
  17. S. Fadida, L. Nyns, S. Van Elshocht and M. Eizenberg, “The Effect of a Ti Layer Inserted into the Gate Metal on the Electrical Properties of Ge-based Metal Oxide Semiconductor Capacitors”, J. Electronic Materials, 46, (2016), 386.
  18. P. Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten, and M. Eizenberg, “Strain-induced Phase Variation and Dielectric Constant Enhancement of Epitaxial Gd2O3”, J. Appl. Phys. 120, (2016), 014101.
  19. F. Cerbu, O. Madia, D.V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J.G. Lisoni, J.A. Kittl, J. Strand, A.L. Shluger, V.V. Afanas’ev, M. Houssa, and A. Stesmans, “Intrinsic Electron Traps in Atomic-Layer Deposited HfO2 Insulators”, Appl. Phys. Lett. 108, (2016), 222901.
  20. Pini Shekhter, Cecile Uzan-Saguy, Jürgen Schubert, Yaron Amouyal and Moshe Eizenberg, “An Experimental and Computational Study of 0D Metallic Behavior at the LaLuO3 / SrTiO3 Interface”, Vac. Sci. & Technol. B, 34, (2016), 021204.
  21. Igor Krylov, Boaz Pokroy, Dan Ritter, and Moshe Eizenberg, “A Comparative Study of AlN and Al2O3 Based Gate Stacks Grown by Atomic Layer Deposition on InGaAs”, Appl. Phys. 119, (2016), 084507.
  22. Felix Palumbo, Salvatore Lombardo and Moshe Eizenberg, “Influence of Gate Oxides with High Thermal Conductivity in the Failure Distribution of InGaAs-based MOS Stacks”, Microelectronics Reliability, 56, (2016), 22.
  23. Kechao Tang, Roy Winter, Liangliang Zhang, Ravi Droopad, Moshe Eizenberg, and Paul Mclntyre, “Border Trap Reduction in Al2O3/InGaAs Gate Stacks”, Phys. Lett. 107, (2015), 202102.
  24. Shlomo Mehari, Yonatan Calahora, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter, “Role of Transport during Transient Phenomena in AlGaN/GaN HEMT Structures”, IEEE – Electron Devices Letters, 36, (2015), 1124.
  25. Palumbo, P. Shekhter, K. Cohen Weinfeld, and M. Eizenberg, “Characteristics of the Dynamics of Breakdown Filaments in Al2O3/InGaAs Stacks”, Appl. Phys. Lett. 107, (2015), 122901.
  26. Igor Krylov, Dan Ritter and Moshe Eizenberg, “The Role of the Substrate on the Dispersion in Accumulation in III-V Compound Semiconductor Based Metal-Oxide-Semiconductor Gate Stacks”, Phys. Lett. 107, (2015), 103503.
  27. Igor Krylov, Dan Ritter and Moshe Eizenberg, “Two Contributions to the Dispersion in Accumulation at InGaAs-based Metal/Oxide/Semiconductor (MOS) Gate Stacks with a Bi-layered Dielectric Structure”, Appl. Phys. 118, (2015), 084502.
  28. Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter, “Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements”, IEEE – Elecron Device Letters, 36, (2015), 893.
  29. Winter, I. Krylov, C. Cytermann, K. Tang, J. Ahn, P. C. McIntyre, and M. Eizenberg, “Fermi Level Pinning in Metal/Al2O3/InGaAs Gate Stack after Post Metallization Annealing”, J. Appl. Phys. 118, (2015), 055302.
  30. Igor Krylov, Dan Ritter, and Moshe Eizenberg, “The Physical Origin of Dispersion in Accumulation in InGaAs based Metal Oxide Semiconductor (MOS) Gate Stacks”, Appl. Phys. 117, (2015), 174501
  31. Felix Palumbo, Igor Krylov, and Moshe Eizenberg, “Comparison of the Degradation Characteristics of AlON/InGaAs and Al2O3/InGaAs Stacks”, Appl. Phys. 117, (2015), 104103.
  32. Oren Zonensain, Sivan Fadida, Ilanit Fisher, Juwen Gao, Kaushik Chattopadhyay, Greg Harm, Tom Mountsier, Michal Danek, and Moshe Eizenberg, “Work Function Tuning of Plasma-Enhanced Atomic Layer Deposited WCxNy Electrodes for Metal/ Oxide/ Semiconductor Devices”, Phys. Lett. 106, (2015), 082107.
  33. P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H. J. Osten, and M. Eizenberg, “The Influence of Carbon Doping on the Performance of Gd2O3 as High-k Gate Dielectric”, Appl. Phys. Lett. 105, (2014), 262901.
  34. Igor Krylov, Moshe Eizenberg, and Dan Ritter, “Determination of the Dielectric Constant of InGaAs Based Gate Stacks by a Modified Thickness Series Method”,  Phys. Lett. 105, (2014), 203506.
  35. S. Fadida, P. Shekhter, D. Cvetko, L. Floreano, A. Verdini, L. Nyns, S. Van Elshocht, I. Kymissis, and M. Eizenberg, “Direct Observation of Both Contact and Remote Oxygen Scavenging of GeO2in an MOSFET Stack”, J. Appl. Phys.116, (2014), 164101.
  36. Shlomo Solomon Mehari, Eilam Yalon, Arkady Gavrilov, David Mistele, Gad Bahir, Moshe Eizenberg, and Dan Ritter, “Comparison of Simulations and Measurements of Gate Leakage Currents in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors”, IEEE Transactions on Electron Devices, 61, (2014), 3558.
  37. P. Shekhter, F. Palumbo, K. Cohen Weinfeld, and M. Eizenberg “X Ray Phoroelectron Analysis of Oxide-Semiconductor Interface after Breakdown in Al2O3/InGaAs Stacks”, Appl. Phys. Lett. 105, (2014), 102908.
  38. H. Osten, D. Schwendt, A. Chaudhuri, A. Fissel, P. Shekhter and M. Eizenberg, “Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon”, ECS Transactions 61, 3 (2014).
  39. F. Palumbo, R. Winter, I. Krylov and M. Eizenberg, “Characteristics of Stress-Induced Defects under Positive Bias in High-k / InGaAs Stacks”, Appl. Phys. Lett. 104, (2014), 252907.
  40. Igor Krylov, Roy Winter, Dan Ritter, and Moshe Eizenberg, “Indium Out-Diffusion in Al2O3/InGaAs Stacks during Anneal at Different Ambient Conditions”,  Phys. Lett. 104, (2014), 243504.
  41. Felix Palumbo, Salvatore Lombardo and Moshe Eizenberg, “Physical Mechanism of Progressive Breakdown in Gate Oxides”,  Appl. Phys.115, (2014), 224101.
  42. R. Winter, I. Krylov, J. Ahn, P. C. McIntyre, and M. Eizenberg, “The Effect of Post Oxide Deposition Annealing on the Effective Work Function in Metal/Al2O3/InGaAs Gate Stacks”, Appl. Phys. Lett. 104, (2014), 202103.
  43. F. Palumbo, P. Shekhter, and M. Eizenberg, “Influence of the Oxide-Semiconductor Interface on the Resistive Switching Phenomenon in Metal / Al2O3/ InGaAs”, Solid State Electronics, 93, (2014), 56.
  44. F. Palumbo and M. Eizenberg, “Degradation Characteristics of Metal / Al2O3/ n-InGaAs Capacitors”, J. Appl. Phys. 115, (2014), 014106.
  45. S. Fadida, F. Palumbo, L. Nyns, D. Lin, S. Van Elshocht, M. Caymax, and M. Eizenberg, “Hf-based High-k Dielectrics for p-Ge MOS Gate Stacks”, J. Vac. Sci. Technol. B32,(2014), 03D105.
  46. Moshe Eizenberg and Lior Kornblum, “Origins for Fermi Level Control in Metal/High-K/Si Stacks with Inserted Dielectric Layers”, (ECS Transactions, 2013) vol. 58-7, p. 65.
  47. Igor Krylov, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter “Indium Outdiffusion and Leakage Degradation in Metal/Al2O3/In53Ga0.47As Capacitors”, Appl. Phys. Lett. 103, (2013), 053502.
  48. F. Palumbo, P. Shekhter, I. Krylov, D. Ritter, and M. Eizenberg, “Resistive Switching Effect on Al2O3/InGaAs Stacks”, Microelectronic Engineering 109, (2013), 83.
  49. Pini Shekhter, Shlomo Mehari, Dan Ritter and Moshe Eizenberg, “Epitaxial NiInGaAs Formed by Solid State Reaction on In53Ga0.47As: Structural and Chemical Study”, J. Vac. Sci. Technol. B 31, (2013), 031205.
  50. Roy Winter, Jaesoo Ahn, Paul C. McIntyre, and Moshe Eizenberg, “A New Method for Determining Flat-band Voltage in High Mobility Semiconductors”,  Vac. Sci. Technol. B31, (2013), 030604.
  51. Lior Kornblum, Boris Meyler, Joseph Salzman, and Moshe Eizenberg, “The Electrostatics of Ta2O5in Si-based Metal Oxide Semiconductor Devices”,  Appl. Phys. 113, (2013), 074102.
  52. Lior Kornblum, Yair Paska, Hossam Haick, and Moshe Eizenberg, “A Beveled Oxide Study of the Surface Potential Modulation of Self Assembled Alkyltrichlorosilanes”,  Phys. Chem. C117, (2013), 233.
  53. Lior Kornblum, Pini Shekhter, Yair Slovatizky, Yaron Amouyal, and Moshe Eizenberg, “Composition and Crystallography Dependence of the Work Function: Experiment and Calculations of Pt-Al Alloys”,  Rev. B 86, (2012), 125305.
  54. Shlomo Mehari, Arkady Gavrilov, Shimon Cohen, Pini Shekhter, Moshe Eizenberg, and Dan Ritter, “Measurement of the Schottky Barrier Height between Ni-InGaAs Alloy and In53Ga0.47As”,Appl. Phys. Lett. 101, (2012), 072103.
  55. Igor Krylov, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter, “Correlation between Ga-O Signature and Midgap States at the Al2O3/In53Ga0.47As Interface”, Appl. Phys. Lett. 101, (2012), 063504.
  56. Jonathan Avner Rothschild, Aya Cohen, Anna Brusilovsky, Lior Kornblum, Yaron Kauffmann, Yaron Amuyal, and Moshe Eizenberg, “Fermi Level Tuning Using the Hf-Ni Alloy System as a Gate Electrode in Metal-Oxide-Semiconductor Devices”,  Appl. Phys. 112, (2012), 013717.
  57. Schwendt, H. J. Osten, P. Shekhter, and M. Eizenberg, “Strain-Induced Effects of the Dielectric Constant for Thin, Crystalline Rare Earth Oxides on Silicon”, Appl. Phys. Lett. 100, (2012), 232905.
  58. Igor Krylov, Lior Kornblum, Arkady Gavrilov, Dan Ritter, and Moshe Eizenberg, “Experimental Evidence for the Correlation Between the Weak Inversion Hump and Near Midgap States in Dielectric/InGaAs Interfaces”,  Phys. Lett. 100, (2012), 173508.
  59. Lior Kornblum, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman and Moshe Eizenberg, “Investigation of the Band Offsets Caused by Thin Al2O3Layers in HfO2 Based Si Metal Oxide Semiconductor Devices”,  Phys. Lett. 100, (2012), 062907.
  60. Lior Kornblum, Yair Paska, Jonathan A. Rothschild, Hossam Haick, and Moshe Eizenberg, “Probing the Electrostatics of Self-Assembled Monolayers by Means of Beveled Metal-Oxide-Semiconductor Structures”,  Phys. Lett. 99, (2011), 233508.
  61. Also featured in  J. of Nanoscale Sci & Tech., 25(2012).
  62. Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne, Moshe Eizenberg, and Paul C. McIntyre, “Titania/Alumina Bilayer Gate Insulators for InGaAs Metal-Oxide-Semiconductor Devices”,  Phys. Lett. 99, (2011), 232902.
  63. Pini Shekhter, Zuoguang Liu, Lior Kornblum, Sharon Cui, T. P. Ma and Moshe Eizenberg, “Effect of Hydrogen on the Chemical Bonding and Band Structure at the Al2O3/In53Ga0.47As Interface”,Appl. Phys. Lett. 99, (2011), 232103.
  64. Zuoguang Liu, Sharon Cui, Pini Shekhter, Xiao Sun, Lior Kornblum, Jie Yang, Moshe Eizenberg, K.S. Chang-Liao, and T. P. Ma, “Effect of H on Interface Properties of Al2O3/In53Ga0.47As”, Appl. Phys. Lett. 99, (2011), 222104.
  65. Igor Krylov, Arkady Gavrilov, Dan Ritter, and Moshe Eizenberg, “Elimination of the Weak Inversion Hump in Si3N4/InGaAs (001) Gate Stacks Using an in situNH3Pre-Treatment”,   Phys. Lett. 99, (2011), 203504.
  66. Lior Kornblum, Jonathan A. Rothschild, Yaron Kauffmann, Reuven Brener, and Moshe Eizenberg, “Band Offsets and Fermi Level Pinning at Metal-Al2O3Interfaces”,  Rev. B. 84, (2011), 155317.
  67. Krylov, A. Gavrilov, S. Cohen, D. Ritter and M. Eizenberg, “Si3N4as a Useful Dielectric for InGaAs MIS Stacks,” (ECS Transactions, 2011) vol. 41, p. 255.
  68. Fadida, M. Eizenberg, L. Nyns, S. Van Elshocht, and M. Caymax, “Band Alignment of Hf-Zr Oxides on Al2O3GeO2Ge Stacks”, Microelectron. Eng. 88, (2011), 1557.
  69. Lipp, Z. Shahar, B.C. Bittel, P.M. Lenahan, D. Schwendt, H.J. Osten, and M. Eizenberg, “Trap-Assisted Conduction in Pt-Gated Gd2O3/Si Capacitors”,  J. Appl. Phys. 109, (2011), 073724.
  70. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P.E. Schiffer, T.N. Jackson, S.E. Mohney, J.B. Boos, B.R. Bennett, I. Geppert, M. Eizenberg, and S. Datta, “Advanced Composite High-k Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors”, IEDM (IEEE International Electron Devices Meeting) 6.3.1, 2010.
  71. Cui, X. Sun, Z. Liu, T.P. Ma, C.-Y. Peng, W. Zhang, L. Kornblum, and M. Eizenberg, “High Quality Al2O3for Low Voltage, High Speed, High Temperature (up to 250C) Nonvolatile Memory Technology”, IEEE Electron Device Lett. 31, (2010), 1443.
  72. Liu, S. Cui, L. Kornblum, M. Eizenberg, M.-F. Chang, and T. P. Ma, “Inelastic Electron Tunneling Spectroscopy Study of Ultra-Thin Al2O3-TiO2Dielectric Stack on Si”, Appl. Phys. Lett.97, (2010), 202905.
  73. Geppert, M. Eizenberg, A. Ali, and S. Datta, “Band Offsets Determination and Interfacial Chemical Properties of the Al2O3/GaSb System”, Appl. Phys. Lett. 97, (2010), 162109.
  74. Geppert, M. Eizenberg, N. A. Bojarczuk, L.F. Edge, M. Copel, and S. Guha, “Determination of Band Offsets, Chemical Bonding and Microstructure of the (TbxSc1-x)2O3/Si System”, J. Appl. Phys.108, (2010), 024105.
  75. Rothschild and M. Eizenberg, “Work Function Calculation of Solid Solution Alloys Using the Image Force Model”, Phys. Rev. B 81, (2010), 224201.
  76. Geppert, M. Eizenberg, N.A. Bojarczuk, L.F. Edge, M. Copel, and S. Guha, “Investigation of Band Gap, Band Alignment and Bonding States of the (TbXSc1-X)2O3/Si System”, in: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes and Equipment, edited by E.P. Gusev, H.Iwai, D-L. Kwong, M.C. Ozturk, F. Roozeboom, P.J. Timans, and V. Narayanan, (ECS Transactions, 2010) vol. 28-1, p. 191.
  77. Rothschild, H. Avraham, E. Lipp, and M. Eizenberg, “Tunneling of Holes Observed at Work Function Measurements of Metal/HfO2/SiO2/n-Si Gate Stacks”, Appl. Phys. Lett. 96, (2010), 122102.
  78. Geppert, E. Lipp, R. Brener,  S. Hung, and M. Eizenberg, ” Effect of Composition and Chemical Bonding on the Band Gap and Band Offsets to Si of HfxSi1-xO2(N) Films”, J. Appl. Phys. 107, (2010), 053701 .
  79. Rothschild and M. Eizenberg, “Compositional Dependence of Work Function and Fermi Level Position of the HfNx/SiO2System”, Microelectronic Engineering 86,(2009) 1771.
  80. Lipp, H. J. Osten, and M. Eizenberg, “The Thermal Stability of Pt / Epitaxial Gd2O3/ Si Stacks and its Dependence on Heat-Treatment Ambient”, J. Appl. Phys. 106, (2009), 113505.
  81. Kohn and M. Eizenberg, “Diffusion Barriers for Ultra-Large-Scale Integrated Copper Metallization”, inAdvanced Nanoscale ULSI Interconnects – Fundamental and Application,Ed. Y. Shacham-Diamand, T. Osaka, M. Datta, and T. Ohba, (Springer, 2009), p. 93.
  82. Rothschild and M. Eizenberg, “Tuning of Fermi Level Position at HfNx/SiO2Interface”, Appl. Phys. Lett., 94, (2009), 081905.
  83. Lisiansky, A. Fenigstein, A. Heiman, Y. Raskin, Y. Roizin, L. Bartholomew, J. Owyang, A. Gladkikh, R. Brener, I. Geppert, E. Lyakin, B. Meyler, Y. Shnieder, S. Yofis, and M. Eizenberg, “Al2O3-SiO2Stack with Enhanced Reliability”,J. Vac. Sci. Technol. B27, (2009), 476.
  84. Lipp, M. Eizenberg, M. Czernohorsky, and H. J. Osten, “Effect of Oxide Structure on the Fermi-Level Pinning at Metal/ Epitaxial Gd2O3Interfaces”, Appl. Phys. Lett., 93, (2008), 193513.
  85. Fisher and M. Eizenberg, “Copper Ion Diffusion in Porous and Nonporous SiO2-based Dielectrics Using Bias Thermal Stress and Thermal Stress Tests”, Thin Solid Films, 516, (2008), 407.
  86. Gandhi, U. Tisch, B. Singh, M. Eizenberg, and G. Ramanath, “Ultraviolet-Oxidized Mercaptan-Terminated Organosilane Nanolayers as Diffusion Barriers at Cu-Silica Interfaces”, Appl. Phys. Lett. 91, (2007), 143503.
  87. Lipp, M. Eizenberg, M. Czernohorsky, and H. J. Osten, “Thermal stability of Pt / Epitaxial Gd2O3 / Si Stacks”, inCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies, edited by Y. Chabal, A. Estève, N. Richard, G. Wilk, (Mater. Res. Soc. Symp. Proc. 2007), Vol.996E, p.0996-H03-08.
  88. Gandhi, A.P. Singh, M. Lane, M. Eizenberg, and G. Ramanath, “Copper Diffusion and Mechanical Toughness at Cu-Silica Interfaces Glued with Polyelectrolyte Nanolayers”, J. Appl. Phys.101, (2007), 084505.
  89. Singh, D.D. Gandhi, E. Lipp, M. Eizenberg, and G. Ramanath, “Suppression of Chemical and Electrical Instabilities in Mesoporous Silica Films by Molecular Capping”,  J. Appl. Phys. 100, (2007), 114504.
  90. Darshan D. Gandhi, Michael Lane, Yu Zhou, Sarij Nayak, Ulrike Tisch, Moshe Eizenberg, and Ganapathiraman Ramanath, “Annealing-Induced Large Interfacial Toughening Using a Molecular Nanolayer Glue”, Nature, 447, (2007), 299.
  91. Wu and M. Eizenberg, “FTIR and Ellipsometry Characterization of Ultra-Thin ALD TaN Films”, Materials Chemistry and Physics, 101, (2007), 269.
  92. Marom and M. Eizenberg, “In-Situ Characterization of Interfaces-Induced Resistivity Change in Nanometric Dimensions”, Proceedings of Materials Research Society Spring Meeting, San Francisco, CA, April 2006, Vol. 914, p. 0914-F06-03.
  93. Wu and M. Eizenberg, “Effects of Thermal Treatment on Structures of Cu/ Atomic-Layer Deposited TaN Films / Si Stacks”, Thin Solid Films, 514, (2006), 33.
  94. Marom, J. Mullin and M. Eizenberg, “Size Dependent Resistivity of Nanometric Copper Wires”,Phys. Rev. B,74, (2006), 045411.
  95. Marom and M. Eizenberg, “The Effect of Surface Roughness on the Resistivity Increase in Nanometric Dimensions”, J. Appl. Phys., 99, (2006), 123705.
  96. Marom, M. Ritterband, and M. Eizenberg, “The Effect of Grains Size on Resistivity in Nanometric Dimensions”,Thin Solid Films, 510, (2006), 62.
  97. Lipp, A. Kohn, and M. Eizenberg, “Lifetime-Limited Current in Cu-Gate Metal Oxide Semiconductor Capacitors Subjected to Bias Thermal Stress”, J. Appl. Phys.,99, (2006), 034504-1.
  98. Dubin, S. Lopatin, A. Kohn, N. Petrov, M. Eizenberg, and Y. Shacham-Diamand, “Electroless Barrier and Seed Layers for On-Chip Metallization”, in: New Trends in Electrochemical Technology, Vol. 3, Microelectronic Packaging,Ed. M. Datta, T. Osaka, and W.J. Schultze (CRC Press, 2004), p.65.
  99. Marom and M. Eizenberg, “The Temperature Dependence of Resistivity in Thin Metal Films”,J. Appl. Phys.,96, (2004), 3319.
  100. Kohn, E. Lipp, M. Eizenberg, and Y. Shacham-Diamand, “Copper Related Degradation of SiO2in Metal-Oxide-Semiconductor Capacitors Subjected to Bias Thermal Stress: Leakage of the Minority Charge Carriers in the Inversion Layer”, Appl. Phys. Lett., 85, (2004), 627.
  101. Wu, A. Kohn, and M. Eizenberg, “Structures of Ultra Thin Atomic Layer Deposited TaNxFilms”, J. Appl. Phys. 95,(2004), 6167.
  102. Fisher, W. D. Kaplan and M. Eizenberg, “Dielectric Property-Microstructure Relationship for Nanoporous Silica Based Thin Films”, J. Appl. Phys. 95,(2004), 5762.
  103. Ecke, S. Riedel, S.E. Schulz, E. Lipp, T. Gessner and M. Eizenberg, “Deposition and Treatment of Titanium Based Barrier Layers by MOCVD”, Electrochem. Soc. Proc. 2003-08(Pennington, New-Jersey, 2003) pp. 1224-1230.
  104. Emelianov, G. Ganesan, A. Puzic, S. Schulz, M. Eizenberg, H.-U. Habermeier, H. Stoll, “Investigation of Electromigration in Copper Interconnects by Noise Measurements”, In: Proceedings of SPIE Vol. 5112: Noise as a Tool for Studying Materials, Ed. M.B. Weissmann, N.E. Israeloff, A.S. Kogan (SPIE, Bellingham, WA 2003), p. 271.
  105. Gopal Ganesan and M. Eizenberg, “Chemical Vapor Deposited RuOxFilms: Interfacial Adhesion Study”, Mat. Sci. and Eng. B 103(2003) 213.
  106. M. Eizenberg, “Introduction: Interlayer Dielectrics in Microelectronic Devices”, in: Interlayer Dielectrics for Semiconductor Technologies, Ed. S.P. Murarka, M. Eizenberg, and A.K. Sinha (Elsevier, 2003), p. 1.
  107. Kohn, M. Eizenberg, and Y. Shacham-Diamand, “Structure of Electroless Deposited Co0.9W0.02P0.08Thin Films and their Evolution with Thermal Annealing”, J. Appl. Phys. 94, (2003), 3810.
  108. Kohn, M. Eizenberg, and Y. Shacham-Diamand, “Copper Grain Boundary Diffusion in Electroless Deposited Cobalt Based Films and its Influence on Diffusion Barrier Integrity for Copper Metallization”, J. Appl. Phys., 94, (2003), 3015.
  109. Kohn, M. Eizenberg, and Y. Shacham-Diamand, “The Role of Microstructure in Nanocrystalline Conformal Diffusion Barriers for Copper Metallization”, Appl. Surf. Sci., 212-213, (2003), 367.
  110. Gopal Ganesan, Z. Spilman, and M. Eizenberg, “Chemical Vapor Deposited RuOxFilms: Annealing Effects”,Thin Solid Films, 425, (2003), 163.
  111. M. Eizenberg, A. Kohn, and S. Joseph, “Nanocrystalline Conformal Diffusion Barriers for Copper Metallization”, Proceedings of The Advanced Metallization Conference (AMC), San Diego, CA, Oct. 2002, p. 745.
  112. Ilanit Fisher, Wayne D. Kaplan, Moshe Eizenberg, Michael Nault, and Timothy Weidman, “Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization”, in: Silicon Materials – Processing, Characterization and Reliability, J.L. Veteran, D.L. O’Meara, V. Misra, and P.S. Ho, (Materials Research Society Proceedings, 2002) Vol. 716, p. 355.
  113. Joseph, M. Eizenberg, C. Marcadal, and L. Chen, “TiSiN Films Produced by CVD as Diffusion Barriers for Cu Metallization”, J. Vac. Sci. Technol. B 20, (2002), 1471.
  114. Gopal Ganesan and M. Eizenberg, “Modifications of CVD-RuOxFilms Induced by Various Processes”,Microelectronic Eng. 64, (2002), 449.
  115. Kohn, M. Eizenberg, and Y. Shacham-Diamand, “Improved Diffusion Barriers for Copper Metallization Obtained by Passivation of Grain Boundaries in Electroless Deposited Cobalt Based Films”, J. Appl. Phys., 92, (2002), 5508.
  116. Gopal Ganesan, M. Eizenberg, and C. Dornfest, “Chemical Vapor Deposited RuOxFilms: Effect of Oxygen Flow Rate”, J. Electrochem. Soc., 149, (2002), G510.
  117. Christophe Marcadal, Moshe Eizenberg, Alex Yoon, and Ling Chen, “Metallorganic Chemical Vapor Deposited TiN Barrier Enhancement with SiH4Treatment”,  Electrochem. Soc. 149, (2002) C52.
  118. Kröger, M. Eizenberg, C. Marcadal, and L. Chen, “Plasma Induced Microstructural, Compositional and Resistivity Changes in Ultrathin Chemical Vapor Deposited Titanium Nitride Films”,J. Appl. Phys., 91, (2002), 5149.
  119. Yang, H. Chung, A. Yoon, H. Fang, A. Zhang, C. Knepfler, R. Jackson, J.S. Byun, A. Mak, M. Eizenberg, M. Xi, M. Kori, and A.K. Sinha, “Atomic Layer Deposition of Tungsten Film from WF6/B2H6: Nucleation Layer for Advanced Semiconductor Devices”, Advanced Metallization Conference 2001 (AMC 2001),  Ed. A.J. McKerrow, Y. Shacham-Diamand, S. Zaima, and T. Ohba, p. 655.
  120. Ariel, M. Eizenberg, Y. Wang, and S.P. Murarka, “Deposition Temperature Effect on Thermal Stability of Fluorinated Amorphous Carbon Films Utilized as Low-K Dielectrics”, Materials Sci. in Semicond. Proc., 4,(2001), 383.
  121. Kohn, M. Eizenberg, Y. Shacham-Diamand, B. Israel and Y. Sverdlov, “Evaluation of Electroless Deposited Co(W, P) Thin Films as Diffusion Barriers for Copper Metallization”,Microelectronic Eng., 55, (2001), 297.
  122. Kohn, M. Eizenberg, Y. Shacham-Diamand, and Y. Sverdlov, “Characterization of Electroless Deposited Co(W, P) Thin Films for Encapsulation of Copper Metallization”, Materials Science and Engineering A 302, (2001), 26.
  123. Ariel, M. Eizenberg, Y. Wang, and H. Bakhru, “The Interface of Fluorinated Amorphous Carbon with Copper Metallization”, Materials Science and Engineering A 302, (2001), 31.
  124. Shalish, C.E.M. de Oliveira, Yoram Shapira, L. Burstein, and M. Eizenberg, “Thermal Stability of Pt Schottky Contacts to 4H-SiC”, J. Appl. Phys., 88, (2000), 5724.
  125. Kröger, M. Eizenberg, E. Rabkin, D. Cong, and L. Chen, “The Role of Kinetics in the Nucleation and Void Formation in Copper Films Produced by Chemical Vapor Deposition”, J. Appl. Phys., 88, (2000), 1867.
  126. Zeitouny, M. Eizenberg, S. Pearton, and F. Ren, “Contact Resistivity and Transport Mechanisms in W Contacts to p- and n-GaN’, J. Appl. Phys., 88, (2000), 2048.
  127. Aubry-Fortuna, G. Tremblay, F. Meyer, Y. Miron, Y. Roichman, M. Eizenberg, F. Fortuna, U. Hermann, and H. Strunk, “Phase Formation and Strain Relaxation During Thermal Reaction of Zr and Ti with Strained Si1-x-yGexCyEpilayers”, J. Appl. Phys., 88, (2000), 1418.
  128. Shalish, L. Kronik, G. Segal, Yoram Shapira, M. Eizenberg, and J. Salzman, “Yellow Luminescence and Fermi Level Pinning in GaN Layers”, Appl. Phys. Lett., 77, (2000), 987.
  129. Berner, M. Beregovsky, and M. Eizenberg, “Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES”, Mikrochimica Acta, 132, (2000), 461.
  130. Roichman, A. Berner, R. Brener, C. Cytermann, D. Shilo, E. Zolotoyabko, M. Eizenberg, and H.J. Osten, “Co Silicide Formation on Epitaxial Si1-yCy/Si (001) Layers”, J. Appl. Phys., 87, (2000), 3306.
  131. Kröger, M. Eizenberg, D. Cong, N. Yoshida, L. Chen, S. Ramaswami, and D. Carl, “Influence of Diffusion Barriers on the Nucleation and Growth of CVD Cu for Interconnect Applications”,Microelectronic Eng., 50, (2000), 375.
  132. Yosi Shacham-Diamand, Yelena Sverdlov, Nick Petrov, Li Zhou, Nathan Croitoru, Alexandra Inberg, Eliezer Gileadi, Amit Kohn, and Moshe Eizenberg, “Material Properties of Electroless 100-200 nm thick CoWP Films”, Electrochem. Soc. Proceedings 99-34, (1999), 102.
  133. Kröger, M. Eizenberg, D. Cong, N. Yoshida, L.Y. Chen, and L. Chen, “Nucleation and Growth of CVD Cu Films”, in: Advanced Interconnects and Contacts, Ed. D. Edelstein, T. Kikkawa, M. Ozturk, K.N. Tu, and E. Weitzman (Materials Research Society Symposia Proceedings, 1999), Vol. 564, p. 237.
  134. Ariel, M. Eizenberg, and E. Tzou, “The Study of Fluorinated Amorphous Carbon as Low-K Dielectric and Its Interface with Cu Metallization”, in : Advanced Interconnects and Contacts, Ed. D. Edelstein, T. Kikkawa, M. Ozturk, K.N. Tu, and E. Weitzman (Materials Research Society Symposia Proceedings, 1999), Vol. 564, p. 565; and in : Low- Dielectric Constant Materials and Applications in Microelectronics, Ed. K. Endo, J. Hummel, W.W. Lee, M. Mills, and S.Q. Wang (Materials Research Society Symposia Proceedings, 1999), Vol. 565.
  135. Kröger, M. Eizenberg, D. Cong, N. Yoshida, L.Y. Chen, S. Ramaswami, and D. Carl, “Properties of Cu Films Prepared by CVD for Advanced Metallization of Microelectronic Devices”, J. Electrochem. Soc., 146, (1999), 3248.
  136. Cao, F. Ren, S.J. Pearton, A. Zeitouny, M. Eizenberg, J.C. Zolper, C.R. Abernathy, J. Han, R.J. Shul, and J.R. Lothian, “W and WSixOhmic Contacts on p- and n-Type GaN”, J. Vac. Sci. Technol. A, 17, (1999), 1221.
  137. Avinun, W.D. Kaplan, M. Eizenberg, T. Guo, and R. Mosely, “Factors Which Determine the Orientation of CVD Al Films Grown on TiN”, Solid State Electronics, 43, (1999), 1011.
  138. Cao, S.J. Pearton, S.M. Donovan, C.R. Abernathy, F. Ren, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg, R.J. Shul, and A.G. Baca “Thermal Stability of WSixand W Ohmic Contacts on GaN”, Mater. Sci. Eng. B59, (1999), 362.
  139. Zeitouny, M. Eizenberg, S.J. Pearton, and F. Ren, “W and W/WSi/In1-xAlxN Ohmic Contacts to n-type GaN”,Mater. Sci. Eng. B59, (1999), 358.
  140. Beregovsky, I. Levin, A. Berner, and M. Eizenberg; V. Demuth, and H.P. Strunk, “Effect of Impurities on Initial Stages of Phase Formation for the System of Ti Deposited on (001) Si-Ge Layers”,Thin Solid Films, 338, (1999), 110.
  141. Cao, F. Ren, J.R. Lothian, S.J. Pearton, C.R. Abernathy, J.C. Zolper, M. W. Cole, A. Zeitouny, M. Eizenberg, and R.J. Shul, “Behavior of W and WSixContact Metallization on n- and p-Type GaN”, MRS Internet J. Nitride Semicond. Res. 4S1, (1999), G6.39.
  142. Barthula, V. Aubry-Fortuna, F. Meyer, O. Chaix-Pluchery, A. Eyal, M. Eizenberg, and P. Warren, “Rapid Thermal Annealing of Zr/SiGeC Contacts”, Materials Science in Semiconductor Processing, 1, (1998), 263.
  143. Miron, M. Efrati Fastow, C. Cytermann, R. Brener, M. Eizenberg, M. Glück, H. Kibbel, and U. König, “Strain Relaxation and Dopant Distribution in the Rapid Thermal Annealing of Co with Si/Si1-xGex/Si Heterostructure”,Materials Science in Semiconductor Processing, 1, (1998), 257.
  144. Cao, F. Ren, S.J. Pearton, A. Zeitouny, M. Eizenberg, J.C. Zolper, C.R. Abernathy, R.J. Shul, and J.R. Lothian, “High Temperature Stable W and WSixContacts on n- and p-Type GaN”, in III-V Nitride Materials and Processes III, ed. T.D. Moustakas, S.E. Mohney, and S.J. Pearton, (Electrochem. Soc. Proceedings), Vol. 98-18, (1998), 208.
  145. Aubry-Fortuna, A. Eyal, O. Chaix-Pluchery, M. Bartula, F. Meyer, and M. Eizenberg, “Thermal Stability and Electrical Properties of Zr/Si1-x-yGexCyContacts After Rapid Thermal Annealing”, Appl. Phys. Lett., 73, (1998), 1248.
  146. Kaplan, M. Avinun, M. Eizenberg, M. Naik, T. Guo, and R. Mosely, “Electron Microscopy of CVD Al: Nucleation and Growth”, J. Computer-Assisted Microscopy, 9, (1998), 5.
  147. Pearton, S.M. Donovan, C.R. Abernathy, F. Ren, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg, and R.J. Shul, “High Temperature Stable WSixOhmic Contacts on GaN”, Proceedings of the Fourth International High Temperature Electronics Conference, Albuquerque, NM, June 1998, p. 296.
  148. Avinun, N. Barel, W.D. Kaplan, M. Eizenberg, M. Naik, T. Guo, R. Mosely, K. Littau, S. Zhou, and L. Chen, “Nucleation and Growth of CVD Al on Different Types of TiN”, Thin Solid Films, 320, (1998), 67.
  149. Gilboa and M. Eizenberg, “Formation of Titanium-Silicide on Ion-Implanted Silicon”, in: Rapid Thermal and Integrated Processing VI,  Ed. T.J. Riley, J.C. Gelpey, F. Roozeboom, and S. Saito (Materials Research Society Symposia Proceedings, 1997), Vol. 470, p. 253.
  150. Cytermann, E. Holzman, R. Brener, M. Fastow, M. Eizenberg, M. Glück, H. Kibbel, and U. König, “Dopants Effects on the Interfacial Reaction between Co and Strained Si0.8Ge0.2 Layers”, J. Appl. Phys., 83, (1998), 2019.
  151. Lyakas, M. Beregovsky, M. Eizenberg, and F. Meyer, “Electrical Properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) Contact System”, J. Appl. Phys., 82, (1997), 1716.
  152. Parnis, E. Zolotoyabko, W.D. Kaplan, and M. Eizenberg; N. Mosleh, F. Meyer, and C. Schwebel, “Structural Disorder in SiGe Films Epitaxially Grown on Si by Ion Beam Sputter Deposition”, Thin Solid Films, 294, (1997), 64.
  153. Robles, L. Vasquez, M. Eizenberg, and F. Moghadam, “Characterization of High Density Plasma Chemical Vapor Deposited a-Carbon and a-Fluorinated Carbon Films for Ultra Low Dielectric Applications”, 1997 Proceedings of Third International Dielectrics for ULSI Multilevel Interconnection Conference (DUMIC), p. 26.
  154. Lyakas, D. Parnis, W.D. Kaplan, E. Zolotoyabko, and M. Eizenberg; V. Demuth, and H.P. Strunk, “Unusual Strain Relaxation in SiGe/Si Heterostructures”, Appl. Phys. Lett., 70, (1997), 1287.
  155. Eyal, R. Brener, R. Beserman, and M. Eizenberg; Z. Atzmon, D.J. Smith, and J.W. Mayer, “The Effect of Carbon on Strain Relaxation and Phase Formation in the Ti/Si1-x-yGexCy/Si Contact System”, Appl. Phys. Lett., 69, (1996), 64.
  156. M. Eizenberg, “Chemical Vapor Deposition of TiN for ULSI Applications”, in: Advanced Metallization for Future ULSI, Ed. K.N. Tu, J.W. Mayer, J.M. Poate, and L.J. Chen (Materials Research Society Symposia Proceedings, 1996), Vol. 427, p.325.
  157. Levit, I. Grimberg, B.-Z. Weiss, and M. Eizenberg, “Chemical and Structural Characterization of the Ni-Ti Alloy/6H-SiC Contacts”, III-Nitride, SiC and Diamond Materials for Electronic Devices, Ed. D.K. Gaskill, C.D. Brandt, and R.J. Nemanich, (Materials Research Society Symposia Proceedings, 1996), Vol. 423, p.125.
  158. Lyakas, M. Beregovsky, I. Moskovitz, and M. Eizenberg, “Electrical and Structural Characterization of Ti Contacts to Si0.89Ge0.11/Si(001) Epilayers”, Silicide Thin Films – Fabrication, Properties, and Applications, Ed. R. T. Tung, K. Maex, P. W. Pellegrini, and L. H. Allen, (Materials Research Society Symposia Proceedings, 1996), Vol. 402, p. 475.
  159. Tamir, J. Zahavi, Y. Komem, and M. Eizenberg, “Process Optimization and Related Material Properties of Si Films Produced by Laser Induced CVD from Silane”, J. Materials Science, 31, (1996), 1013.
  160. Levit, I. Grimberg, B.Z. Weiss, and M. Eizenberg, “Interaction between Ni90Ti10 Alloy Thin Film and Si Single Crystal”, J. Appl. Phys., 79, (1996), 1179.
  161. Danek, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zhang, R. Mosely, and M. Eizenberg, “Resistivity Reduction and Chemical Stabilization of Organometallic Chemical Vapor Deposited Titanium Nitride by Nitrogen RF Plasma”,Appl. Phys. Lett., 68, (1996), 1015.
  162. Dixit, A. Paranjpe, Q.Z. Hong, L.M. Ting, J.D. Luttmer, and R.H. Havemann; D. Paul, A. Morrison, K. Littau, M. Eizenberg, and A.K. Sinha, “A Novel 0.25 µm Via Plug Process Using Low Temperature CVD Al/TiN”, Technical Digest of International Electron Devices Meeting (IEDM), Washington DC, Dec. 1995, p. 1001.
  163. Iacoponi, D. Liao, J. Tseng, M. Danek, K. Littau, D. Saigal, M. Eizenberg, and R. Mosely, “Resistivity Enhancement of CVD TiN with In-situ Nitrogen Plasma and its Application in Low Resistance Multilevel Interconnects”, Proceedings of the International Conference on Advanced Metallization for ULSI Applications in 1995, Oregon, 1995, p. 375.
  164. M. Eizenberg, “Chemical Vapor Deposition of TiN for Sub-0.5 µm ULSI Circuits”, MRS Bulletin, Vol. XX, No. 11, (1995), p. 38.
  165. Lyakas, R. Zaharia, and M. Eizenberg, “Analysis of Non-Ideal Schottky and p-n Junction Diodes – Extraction of Parameters from I-V Plots”, J. Appl. Phys., 78, (1995), 5481.
  166. Lyakas, T. Arazi, and M. Eizenberg; V. Demuth, H.P. Strunk, N. Mosleh, F. Meyer, and C. Schwebel, “Effect of Growth Conditions on the Structural Properties of Ion Beam Sputter Deposited SiGe Epilayers”, J. Appl. Phys., 78, (1995), 4975.
  167. Demuth, W. Dorsch, H.P. Strunk, M. Lyakas, M. Eizenberg, N. Mosleh, F. Meyer, and C. Schwebel, “Ion Beam Sputter Deposited Si0.8Ge0.2 Epilayers: Lattice Defects and Surface Topology”,Solid  State Phenomena,Ed. H. Richter, M. Kittler, and C. Claeys,  1995, Vol. 47-48, p. 431.
  168. M. Eizenberg, K. Littau, S. Ghanayem, M. Liao, R. Mosely, and A.K. Sinha, “Chemical Vapor Deposited TiCN – A New Barrier Metallization for Sub-micron Via and Contact Applications”, J. Vac. Sci. Technol., A 13, (1995), 590.
  169. Glück, A. Schüppen, M. Rösler, W. Heinrich, J. Hersener, and U. König; O. Yam, C. Cytermann, and M. Eizenberg, “CoSi2 and TiSi2 for Si/SiGe Heterodevices”, Thin Solid Films, 270, (1995), 549.
  170. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, and W. Beyer, “Fast Interfacial Oxidation of a-Si1-xGex:H by SnO2″, Appl. Phys. Lett., 67, (1995), 389.
  171. Weil, F. Edelman, M. Eizenberg, C. Cytermann, R. Brener, and W. Beyer, “Interaction Between Transparent Conducting Windows and Amorphous Si1-xGex in Solar Cell Structures”, Proceedings of the Sixth Sde Boker Symposium on Solar Electricity Production, Sde Boker, Israel, Nov. 1994.
  172. Tamir, Y. Komem, M. Eizenberg, and J. Zahavi, “Growth Mechanisms of Silicon Films by Laser Induced Chemical Vapor Deposition”, Thin Solid Films, 261, (1995), 251.
  173. Levit, I. Grimberg, B.Z. Weiss, and M. Eizenberg, “Interfacial Reactions of Ni90Ti10 Alloy Thin Films with Si and 6H-SiC Single Crystals”, Proceedings of the Seventh Israeli Materials Engineering Conference, 1994, p. 487.
  174. Littau, R. Mosely, M. Eizenberg, H. Tran, and A. Sinha; G. Dixit, M.K. Jain, M.F. Chisholm, and R.H. Havemann, “CVD TiN: A Barrier Metalization for Sub-Micron Via and Contact Applications”,Proceedings of SPIE – The International Society for Optical Engineering, 1994, Vol. 2335, p. 189.
  175. Dixit, M.K. Jain, M.F. Chisholm, T. Weaver, and R.H. Havemann; K.A. Littau, M. Eizenberg, S. Ghanayem, H. Tran, Y. Maeda, M. Chang, and A. Sinha, “Chemical Vapor Deposited TiN Films for Sub-0.5 µm Contact and Via Applications”, Advanced Metalization for ULSI Applications in 1994, Ed. R. Blumenthal and G. Janssen, (Materials Research Society, Pittsburg, PA, 1995), p. 239.
  176. Lyakas, E. Zolotoyabko, and M. Eizenberg; N. Mosleh, F. Meyer, and C. Schwebel, “Kinetics of Strain Relaxation in SiGe Films Prepared by Ion Beam Sputter Deposition”, Proceedings of the Seventh Israeli Materials Engineering Conference, 1994, p. 94.
  177. Littau, M. Eizenberg, S. Ghanayem, Y. Maeda, M. Chang, and A. Sinha; G. Dixit, M.K. Jain, M.F. Chisholm, and R.H. Havemann, “CVD TiN: A Barrier Metalization for Sub-Micron Via and Contact Applications”, Proceedings of the 11th International IEEE VLSI Multilevel Interconnection Conference, Santa Clara CA, 1994, p. 440.
  178. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, and W. Beyer, “Reduction of SnO2 by a-Si1-xGex”, Advanced Metallization for Devices and Circuits – Science, Technology and Manufacturability, Ed. S.P. Murarka, A. Katz, K.N. Tu, and K. Maex, (Materials Research Society Symposia Proceedings, 1994), Vol. 337, p. 589.
  179. V.S. Rana, M. Eizenberg, S. Ghanayem, J. Roberts, and A.K. Sinha, “Characterization of Tungsten Nucleation Layers Deposited Using Various SiH4 and WF6 Flows”, Advanced Metallization for Devices and Circuits – Science, Technology and Manufacturability, Ed. S.P. Murarka, A. Katz, K.N. Tu, and K. Maex, (Materials Research Society Symposia Proceedings, 1994), Vol. 337, p. 569.
  180. M. Eizenberg, K. Littau, S. Ghanayem, A. Mak, Y. Maeda, M. Chang, and A.K. Sinha, “TiCN – A New Chemical Vapor Deposited Contact Barrier Metallization for Sub-micron Devices”, Appl. Phys. Lett., 65, (1994), 2416.
  181. Edelman, C. Cytermann, R. Brener, M. Eizenberg, Yu. L. Khait, R. Weil, and W. Beyer, “Crystallization in Fluorinated and Hydrogenated Amorphous Silicon Thin Films”, J. Appl. Phys., 75, (1994), 7875.
  182. Mosleh, F. Meyer, C. Scwebel, C. Pellet, and M. Eizenberg, “Growth Mode of Ge Films on Si (100) Substrate Deposited by Ion Beam Sputtering”, Thin Solid Films, 246, (1994), 30.
  183. M. Eizenberg, F. Meyer, H. Benhocine, and D. Bouchier, “Reactive Ion Beam Sputtered WNx Films on Silicon: Growth Mode and Electrical Properties”, J. Appl. Phys., 75, (1994), 3900.
  184. Atzmon, M. Eizenberg, Y. Shacham-Diamand, J.W. Mayer, and F. Schäffler, “Solid Phase Epitaxial Regrowth of Sb Implanted Si1-xGex Strained Layers: Kinetics and Electrical properties”, J. Appl. Phys., 75, (1994), 3936.
  185. Atzmon, M. Eizenberg, Y. Shacham-Diamand, J.W. Mayer, and F. Schäffler, “Low Dose Implantation of Sb in Si1-xGex Epitaxial Layers: Correlation between Electrical Properties and Radiation Damage”, J. Appl. Phys., 75, (1994), 377.
  186. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer, “Interfacial Reactions in the a-Si1-xGex:H /Cr /Quartz System”, J. Non-crystalline Solids, 164-166, (1993), 27.
  187. Tamir, Y. Komem, M. Eizenberg, and S. Speiser, “Multiphoton Photochemical Reactions during Laser Induced Deposition of Si Thin Films”, Optical Materials Technology for Energy Efficiency and Solar Energy Conversions XII, (SPIE Proceedings, 1993), Vol. 2017, p. 208.
  188. Telford, M. Eizenberg, M. Chang, A.K. Sinha, and T.R. Gow, “Chemical Vapor Deposited Tungsten Silicide Films Using Dichlorosilane in a Single-Wafer Reactor: Growth, Properties, and Thermal Stability”, J. Electrochem. Soc.140, (1993), 3689.
  189. Edelman, R. Brener, M. Eizenberg, E. Sader, and Y. Dafne, “Stress and Anisotropy Effects in the Interfacial Reactions of Al and TiNx”, Thin Solid Films, 228, (1993), 242.
  190. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer, “Hindered Transformation of Pd2Ge to PdGe in the Pd/a-Ge:H System”, J. Appl. Phys.,73, (1993), 8309.
  191. Atzmon, M. Eizenberg, E. Zolotoyabko, S.Q. Hong, J.W. Mayer, and F. Schäffler, “Regrowth and Strain Recovery of Sb Implanted Si1-xGex Strained Layers”, Nuclear Instruments and Methods in Physics Research, B 80/81, (1993), 751.
  192. Telford, M. Chang, A.K. Sinha, I. Beinglass, M. Eizenberg, and T. Gow, “Single-Wafer Processing for Highly Uniform DCS WSixx Films on In-situ Doped Polysilicon for Ultra Thin Gate and Bit-line Applications”, Advanced Metallization for ULSI Applications in 1993, Ed. D.P. Favreau, Y. Shacham-Diamand, and Y. Horiike, (Materials Research Society, Pittsburgh, PA, 1994) p. 481.
  193. Atzmon, M. Eizenberg, J.W. Mayer, Y. Shacham-Diamand, and F. Schäffler, “Correlation between Electrical Properties and Structural Changes in Sb Implanted Si1-xGex Layers”, Proceedings of the Sixth Israeli Materials Engineering Conference, 1993, p. 383.
  194. Beregovsky and M. Eizenberg, “A Model for Phase Formation in Thin-Film Metal/Semiconductor Systems from an Amorphous Interlayer”, Proceedings of the Sixth Israeli Materials Engineering Conference, 1993, p. 271.
  195. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer, “Interfacial Processes in the Pd/a-Ge:H System”, Appl. Surface Science, 70/71pt.B, (1993), 722.
  196. Golan, Y. Shapira, and M. Eizenberg, “Effect of Substrate Temperature on Ultrahigh Vacuum Interfaces of Indium-Oxide/GaAs(110)”, J. Vac. Sci. Technol., B 11, (1993), 567.
  197. Telford, M. Eizenberg, M. Chang, A.K. Sinha, and T.R. Gow, “Formation of Compositionally Uniform Tungsten Silicide Films Using Dichlorosilane in a Single-Wafer Reactor”, Appl. Phys. Lett, 62, (1993), 1766.
  198. Meyer, Y. Lemeur, C. Schwebel, C. Pellet, P. Möller, A. Buxbaum, A. Raizman, and M. Eizenberg, “Stress in SiGe Films prepared by Ion Beam Sputter Deposition”, Proceedings of NATO workshop on Multicomponent and Multilayered Thin Films for Advanced Microtechnologies, Bad Windsheim, Germany, 1992, Vol. 234, p. 527.
  199. M. Eizenberg, “Competitive Reactions in Unicomponent / Bicomponent Contact Systems”, in:Advanced Metallization and Processing or Semiconductor Devices and Circuits II,Ed. A. Katz, S.P. Murarka, Y.I. Nissim, and J.M.E. Harper, (Materials Research Society Symposia Proceedings, 1992), Vol. 260, p. 841.
  200. Benhocine, F. Meyer, M. Eizenberg, D. Bouchier, and S. Kianfar, “Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering”, Materials Modification by  Energetic Atoms and Ions, Ed. K.S. Grabowski, S.A. Barnett, S.M. Rossnagel, and K. Wasa, (Materials Research Society Symposia Proceedings, 1992), Vol. 268 , p. 179.
  201. Lemeur, F. Meyer, C. Pellet, C. Schwebel, P. Möller, A. Buxbaum, A. Raizman, and M. Eizenberg, “Stress in Si1-xGex Films Prepared by Ion Beam Sputtering : Origin and Relaxation”, Thin Solid Films, 222, (1992), 180.
  202. Atzmon, M. Eizenberg, Y. Shacham-Diamand, J.W. Mayer, and F. Schäffler , “Electrical Properties of Sb Implanted Si1-xGex  Alloy Layers”, Appl. Phys. Lett, 61, (1992), 2902.
  203. Buxbaum, E. Zolotoyabko, M. Eizenberg, and F. Schäffler, “Strain Relaxation in Epitaxial Si1-xGex/Si(100) Layers Induced by Reaction with Palladium”, Thin Solid Films, 222, (1992), 157.
  204. Golan, Y. Shapira, and M. Eizenberg, “Ultra High Vacuum Study of Indium Oxide / GaAs(110) Interfaces”, J. Appl. Phys., 72, (1992), 925.
  205. Atzmon, M. Eizenberg, P. Revesz, J.W. Mayer, S.Q. Hong, and F. Schäffler, “Epitaxial Regrowth of Sb Implanted Si1-xGex Alloy Layers” Appl. Phys. Lett., 60, (1992), 2243.
  206. Koltin and M. Eizenberg “Ge Rich Co-Ge Contacts to n-type GaAs”, J. Appl. Phys., 71, (1992), 4604.
  207. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer, “Interfacial Reactions in the Pd/a-Si/c-Si System”, J. Appl. Phys.,71, (1992), 289.
  208. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, “Phase Formation at Pd/SiGe Interfaces”, Structure and Properties of Interfaces in Materials, Ed. W.A.T. Clark, U. Dahmen and C.L. Briant, (Materials Research Society Symposia Proceedings, 1991) Vol. 238, p. 273.
  209. Lemeur, F. Meyer, C. Pellet, C. Schwebel, M. Zafrany, M. Eizenberg, R. Beserman, and A. Raizman, “Hetero-epitaxies de Films Si1-xGex Sur Si(100) Par Pulverisation Ionique”, Memoires et Etudes Scientifiques Revue de Metallurgie, 1991 p. 623.
  210. Atzmon, M. Eizenberg, P. Revesz, J.W. Mayer, and F. Schäffler, “Sb Implantation in Si1-xGex/Si(100) Structures”,Phase Formation and Modification by Beam-Solid Interactions, Ed. G.S. Was, D.M. Follstaedt, and L.E. Rehn, (Materials Research Society Symposia Proceedings, 1991) Vol. 235, p. 247.
  211. Koltin and M. Eizenberg, “Stable Schottky Contacts to n-type GaAs Produced by Ge Rich Co-Ge Metallization”, Advanced III-V Compound Semiconductor Growth, Processing and Devices, Ed. S.J. Pearton, D.K. Sadana, and J.M. Zavada, (Materials Research Society Symposia Proceedings, 1991) Vol. 240, p. 479.
  212. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler “Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si(100)”, Jpn. J. Appl. Phys., 30, (1991), 3590.
  213. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer “Phase Transformations in the Cr/a-Si System during Low Temperature Annealing”, J. Non-Crystalline Solids,137 & 138, (1991), 1063.
  214. Meyer, M. Zafrani, M. Eizenberg, R. Beserman, C. Schwebel, and C. Pellet, “Raman Scattering and Stress Measurements in Si1-xGex Layers Epitaxially Grown on Si(100) by Ion Beam Sputter Deposition”, J. Appl. Phys., 70, (1991), 4268.
  215. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, “Compound Formation at the Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si (100)”. Appl. Phys. Lett.,59, (1991), 665.
  216. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, “Compound Formation in Pd Metallized Strained Layers of SiGe on Si”, Phase Transformation Kinetics in Thin Films, Ed. M. Chen, M. Thompson, R. Schwartz, and M. Libera, (Materials Research Society Symposia Proceedings, 1991). Vol. 230, p. 151.
  217. Ben-Tzur and M. Eizenberg, “Interfacial Reactions between Thin Films of Ti-Ta and Single Crystalline Si”, J. Vac. Sci. Technol. A9, (1991), 2721.
  218. Ben-Tzur, M. Eizenberg, and J. Greenblatt, “The Thermal Stability of Al/Ti-Ta Metallization on Si”, J. Appl. Phys.,69, (1991), 3907.
  219. Golan, J. Bregman, Y. Shapira, and M. Eizenberg, “Fabrication and Properties of Indium Oxide / n-GaAs Junctions”, J. Appl. Phys.,69, (1991), 1494.
  220. M. Eizenberg and H.J. Hovel, “Space-Charge-Limited Current Measurements in Semi-Insulating GaAs”, J. Appl. Phys., 69, (1991), 2256.
  221. M. Eizenberg, “Controlled Modifications in the Electrical Properties of Metal / GaAs  Junctions”, in:Advanced Metallization in Microelectronics, Ed. A. Katz, S.P. Murarka and A. Appelbaum (Materials Research Society Symposia Proceedings, 1990), Vol. 181, p. 209-225.
  222. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, “Strained Layers of Si1-xGex Epitaxially Grown on Si and Their Interaction with Palladium”. Proceedings of the Fifth Materials Engineering Conference, Haifa 1990, p. 111.
  223. Atzmon, M. Eizenberg, R. Revesz, J.W. Mayer, and F. Schäffler, “Sb Ion Implantation into Strained Si1-xGex Alloy Layers Epitaxially Grown on (100)Si”, Proceedings of the Fifth Materials Engineering Conference, Haifa 1990, p. 63.
  224. Koltin and M. Eizenberg, “Study of Ge rich Co-Ge Contacts to (001) GaAs”, Proceedings of the Fifth Materials Engineering Conference, Haifa 1990, p. 57.
  225. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer “Amorphous-to-Crystalline Transformation and Metal Induced Crystallization Phenomena in a-Si:F and a-Si:D:H Thin Films”, Kinetics of Phase Transformations, Ed. M.O. Thompson, M.J. Aziz and G.B Stephenson (Materials Research Society Symposia Proceedings, 1990), Vol. 205, p. 75.
  226. Edelman, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, and W. Beyer “Formation of Palladium Silicide and Germanide in the Pd/a-Si/Si, Pd/a-Ge/Si, and Pd/a-GeSi/Si Systems During Thermal Treatment”, Kinetics  of Phase Transformations, Ed. M.O. Thompson, M.J. Aziz and G.P. Stephenson (Materials Research Society Symposia Proceedings, 1990), Vol. 205, p. 281.
  227. Ben-Tzur, R. Fastow, M. Eizenberg, J. Rosenberg, and M. Frenkel, “Modifications in the Interfacial Reaction between Thin Films of Ti and Al due to Alloying the Al with Si”, J. Vac. Sci. Technol., A8, (1990), 4069.
  228. Golan, J. Bregman, Y. Shapira, and M. Eizenberg, “Novel Indium Oxide / n-GaAs Diodes”,Appl. Phys. Lett.,57, (1990), 2205.
  229. Genut and M. Eizenberg, “Study of the Co-Ge/GaAs Contact System”, J. Appl. Phys. 68, (1990), 2146.
  230. Golan and M. Eizenberg, “Characterization of Interfaces of Metal / Amorphized (by Implantation) Si/c-Si Structures”, J. Appl. Phys. 67, (1990), 1940.
  231. Meyer, C. Schwebel, C. Pellet, G. Gautherin, A. Buxbaum, M. Eizenberg, and A.Raizman, “Epitaxial Growth of Single Crystalline Si1-xGex on Si(100) by Ion Beam Sputter Deposition”, Thin Solid Films, 184, (1990), 117.
  232. Genut and M. Eizenberg, “Cobalt Germanium Contacts to n-type GaAs: Electrical and Metallurgical Aspects”,Advances in Materials, Processing and Devices in III-V Compound Semiconductors, Ed. D.K. Sadana, L. Eastman and R. Dupuis (Materials Research Society Symposia Proceedings, 1989) Vol. 144, p. 565.
  233. Ben-Tzur, M. Eizenberg, and J. Greenblatt, “Growth and Structure of Ti and Ta Silicides Formed by Interfacial Reaction between Ti-Ta Alloy Films and Si”, Characterization of the Structure and Chemistry of Defects in Materials, Ed. B.C. Larson, M. Ruhle and D.N Seidman (Materials Research Society Symposia Proceedings, 1989) Vol. 138, p. 515.
  234. Genut and M. Eizenberg, “The Interaction between Thin Films of Cobalt and (001) GaAs Substrates”, J. Appl. Phys.66, (1989), 5456.
  235. M. Eizenberg, A.C. Callegari, D.K. Sadana, H.J. Hovel, and T.N. Jackson, “Enhanced Schottky Barriers Produced by Recoil Implantation of Mg into n-GaAs”, Appl. Phys. Lett. 54, (1989), 1696.
  236. Genut and M. Eizenberg, “Modifications in the Course of Reaction between Co and GaAs due to the Presence of a Ge Film”, Epitaxy of Semiconductor Layered Structures, Ed. R.T. Tung, L.R. Dawson and R.L. Gunshor (Materials Research Society Symposia Proceedings, 1988) Vol. 102, p. 237.
  237. Genut and M. Eizenberg “Correlation between Electrical Properties and Interfacial Reactions for Cobalt – Germanium Contacts to n-type GaAs”, Appl. Phys. Lett. 53, (1988), 672.
  238. Fastow, R. Brener, R. Kalish, and M. Eizenberg, “Ion Beam Mixing of GaAs with Films of Al, Si and Their Nitrides”, J. Appl. Phys.63, (1988), 2586.
  239. Smith, M. Eizenberg, A. Segmüller, and M. Heiblum, “Oriented Growth of Mo and Nb on (100) and (111) GaAs”, in: Fundamentals of Diffusion Bonding, Proceedings of Seiken International Symposium on Interface Structure, Properties and Diffusion Bonding, Tokyo, Japan. Ed. Y. Ishida (Elsevier, Amsterdam, 1987) p. 133.
  240. Fastow, M. Eizenberg, R. Kalish, V. Richter, R. Brener, and M. Peisach, “Ion Beam Mixing of Al with  GaAs”,J. Vac. Sci. Technol. A5, (1987), 2842.
  241. Lahav, M. Eizenberg, and Y. Komem, “Phase Separation in Reactions of Ni-Ta Thin Films with GaAs”, J. Appl. Phys.62, (1987), 1768.
  242. M. Eizenberg, A. Segmüller, M. Heiblum, and D.A. Smith, “Oriented Growth of Niobium and Molybdenum on GaAs Crystals”, J. Appl. Phys. 62, (1987), 466.
  243. Genut and M. Eizenberg, “Compound Formation at the Interface between Cobalt Thin Films and Single Crystal GaAs”, Appl. Phys. Lett. 50, (1987), 1358.
  244. M. Eizenberg, M. Heiblum, M.I. Nathan, N. Braslau, and P.M. Mooney, “Barrier Heights and Electrical Properties of MBE Grown Metal – AlGaAs Junctions”, J. Appl. Phys.61, (1987), 1516.
  245. Fastow, R. Brener, M. Eizenberg, T. Brat, and J.W. Mayer, “Pulsed Ion Beam Irradiation of Ni-Cr Films on Silicon”, J. Vac. Sci. Technol., A5, (1987), 164.
  246. Lahav, M. Eizenberg, and Y. Komem, “Cross-Sectional TEM Study of Phase Separation in Reaction of Ni-Ta Films with GaAs”, Thin Films – Interfaces and Phenomena,Ed. R.J. Nemanich, P.S. Ho and S.S. Lau (Materials Research Society Symposia Proceedings, 1986) Vol. 54, p. 354.
  247. M. Eizenberg, D.A. Smith, M. Heiblum, and A. Segmüller, “Electron Beam Evaporation of Oriented Nb Films onto GaAs Crystals in Ultra-High Vacuum”, Appl. Phys. Lett. 49,(1986), 422.
  248. Lahav, M. Eizenberg, and Y. Komem, “Interfacial Reactions between Ni Films and GaAs”, J. Appl. Phys. 60,(1986), 991.
  249. Ratner, A. Appelbaum, R. Brener and M. Eizenberg, “Interactions of Thin Al Films with Ni-Cr Alloy and Bilayer Films Deposited on Si”, Phys. Stat. Solidi A 94, (1986), 61.
  250. Psaras, M. Eizenberg, and K.N. Tu, “Metal Rich Silicide Formation Between Thin Films of Vanadium and Amorphous Silicon”, LayeredStructures, Epitaxy and Interfaces, Ed. J.M. Gibson and L.R. Dawson (Materials Research Society Symposia Proceedings, 1985) Vol. 37, p. 585.
  251. Heiblum, M.I. Nathan, and M. Eizenberg, “Energy Band Discontinuities in Heterojunctions Measured by Internal Photoemission”, Appl. Phys. Lett. 47, (1985), 503.
  252. M. Eizenberg, R.D. Thompson, and K.N. Tu, “Thermal Stability of the Al/PdxW100-x/Si Contact Systems”,J. Appl. Phys. 58, (1985), 1886.
  253. Fastow, J.W. Mayer, T. Brat, M. Eizenberg and J.O. Olowolafe, “Eutectic Melting by Pulsed Ion Beam Irradiation”, Appl. Phys. Lett. 46, (1985), 1052.
  254. Lahav and M. Eizenberg, “Effect of Phase Separation on the Electrical Properties of the Interface between Ni-Ta Thin Films and GaAs Substrates”, Appl. Phys. Lett. 46, (1985), 430.
  255. Lahav, M. Eizenberg, and Y. Komem, “Epitaxial Phases Formation Due to Interaction Between Ni Thin Films and GaAs”, in Layered Structures, Epitaxy and Interfaces, Ed. J.M. Gibson and L.R. Dawson, (Materials Research Society Symposia Proceeding, 1985) Vol. 37, p. 641.
  256. Brat, M. Eizenberg, R. Fastow, C.J. Palmstrom, and J.W. Mayer, “Pulsed Proton Beam Annealing of Ir and IrxV100-x Thin Films on Silicon”,J. Appl. Phys. 57, (1985), 264.
  257. M. Eizenberg, “Applications of Thin Alloy Films in Silicide Contacts”, in: VLSI Science and Technology / 1984, edited by K.E. Bean and G.A. Rozgonyi (The Electrochemical Society, Pennington, 1984), p. 348.
  258. M. Eizenberg, J.W. Mayer, and K.N. Tu, “Diffusion Barrier for PtSi/Si Structures”, IBM Technical Disclosure Bulletin 27, (1984), 3708.
  259. Psaras, M. Eizenberg, and K.N. Tu, “Sequential Silicide Formation between Vanadium and Amorphous Silicon Thin Film Bilayers”, J. Appl. Phys. 56, (1984), 3439.
  260. M. Eizenberg, K.N. Tu, C.J. Palmstrom, and J.W. Mayer, “Two-Step Al/Ti Metallization to PtSi/Si Structures”,Appl. Phys. Lett. 45, (1984), 905.
  261. Lahav and M. Eizenberg, “Interfacial Reactions of Ni-Ta Thin Films on GaAs”, Appl. Phys. Lett. 45, (1984), 256.
  262. Lahav, T. Brat, C. Cytermann, and M. Eizenberg, “Interfacial Reactions in Laser Annealed Ni/GaAs Contacts”, Proceedings of the Second Materials Engineering Conference, Beer-Sheva 1984, p. 299.
  263. Appelbaum and M. Eizenberg, “Silicides formation for Refractory Metals Alloys (Ta-V and Ti-V) and Si”,J. Appl. Phys. 56, (1984), 2341.
  264. M. Eizenberg, R. Brener, and S.P. Murarka, “Thermal Stability of the Aluminum / Titanium Carbide / Silicon Contact System”, J. Appl. Phys. 55, (1984), 3799.
  265. Appelbaum and M. Eizenberg, ” Summary Abstract: Formation of Silicides by the Interaction of Thin Films of Codeposited Refractory Metals with Si : Alloying V with Ta versus Alloying V with Ti”,J. Vac. Sci. Technol. A2, (1984), 270.
  266. Appelbaum, M. Eizenberg, and R. Brener, “Phase Separation and Layer Sequence Reversal during Silicide Formation with Ni-Cr Alloys and Ni-Cr Bilayers”, J. Appl. Phys. 55, (1984) 914.
  267. M. Eizenberg, S.P. Murarka, and P.A. Heimann, “Interaction of Reactively Sputtered Titanium Carbide Thin Films with Si, SiO2, Ti, TiSi2 and Al”,J. Appl. Phys. 54, (1983), 3195.
  268. M. Eizenberg and S.P. Murarka, “Reactively Sputtered Titanium Carbide Thin Films – Preparation and Properties”,J. Appl. Phys. 54, (1983), 3190.
  269. Appelbaum, M. Eizenberg, and R. Brener, “Solid State Reactions of Ta-W Thin Films and Si Single Crystals”,Vacuum 33,(1983), 227.
  270. M. Eizenberg, “Silicide Formation Resulting from the Interfacial Reaction of Silicon and Thin Films of Ir-V Alloys and Bilayers”, Phys. Stat. Solidi A 73,(1982), 483.
  271. M. Eizenberg, R. Thomson, and K.N. Tu, “A Study of Vanadium as Diffusion Barrier between Aluminum and Gadolinium Silicides Contacts”, J. Appl. Phys. 53, (1982), 6891.
  272. M. Eizenberg and K.N. Tu, “Formation and Schottky Behavior of Manganese Silicides on n-Type Silicon”, J. Appl. Phys.53, (1982), 6885.
  273. M. Eizenberg and R. Brener, “Contact Reaction of Si and Thin Films of Ir-V Alloys”, Thin Solid Films 89, (1982), 355.
  274. M. Eizenberg and R. Brener, “Auger Electron Spectroscopy Analysis of the Contact Reaction of Pt-Si Codeposited Films and Si”, Thin Solid Films 88, (1982), 41.
  275. M. Eizenberg and K.N. Tu, “Formation of Shallow Silicide Contacts of High Schottky Barrier on Si: Alloying Pd and Pt with W vs. Alloying Pd and Pt with Si”, J. Appl. Phys. 53, (1982), 1577.
  276. Blakely and M. Eizenberg, “Surface Morphology and Composition”, in: The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol.1. Ed. D.A. King and D.P. Woodruff (Elsevier, Amsterdam, 1981), p. 1-80.
  277. Thompson, M. Eizenberg, and K.N. Tu, “Schottky Contacts of Gd-Pt and Gd-V Alloys on n-Si and p-Si”,J. Appl. Phys. 52, (1981), 6763.
  278. M. Eizenberg, H. Föll, and K.N. Tu, “Formation of Shallow Schottky Contacts to Si Using Pt-Si and Pd-Si Alloy Films”,J. Appl. Phys. 52, (1981), 861.
  279. M. Eizenberg, H. Föll, and K.N. Tu, “Shallow Silicide Contacts Formed by Using Co-deposited Pt2Si and Pt1.2Si Films”, Appl. Phys. Lett. 37, (1980), 547.
  280. M. Eizenberg, G. Ottaviani, and K.N. Tu, “Effect of Substrate Temperature on the Formation of Shallow Silicide Contacts on Si Using Pd-W and Pt-W Alloys” Appl. Phys. Lett. 37, (1980), 87.
  281. M. Eizenberg and J.M. Blakley, “Carbon Interaction with Nickel Surfaces: Monolayer Formation and Structural Stability”, J. Chem. Phys. 71, (1979), 3467.
  282. M. Eizenberg and J.M. Blakley, “Carbon Monolayer Phase Condensation on Ni (111)”, Surface Sci. 82, (1979), 229.
  283. M. Eizenberg and B. Fisher, “X-ray Brillouin Scattering and Electrical Measurements of Gain and Lattice Attenuation in Semidegenerate n-GaAs”, J. Appl. Phys. 49, (1978), 5260.
  284. M. Eizenberg and B. Fisher, “Impact Ionization Phenomena Initiated by the Acoustoelectric Effect in n-GaAs”, J. Appl. Phys. 49, (1978), 709.
  285. M. Eizenberg and B. Fisher, “Impact Phenomena in Acoustoelectric Amplified Domains in n-GaAs”, Proc. of the Thirteenth International Conference on Physics of Semiconductors, Ed. F.G. Fumi, (Typografica Marves, Rome, 1976).

Patents

1.  Moshe Eizenberg and Shyam P. Murarka, “Forming Low-Resistance Contact to Silicon; Heating Deposited Film of Metal Carbide, Nitride or Boride”, United States Patent No. 4,502,209.

2.  Moshe Eizenberg and King-Ning Tu, “Electrical Multilayer Contact for Microelectronic Structure”, United States Patent No. 4,980,751.

3.  Michio Aruga, Moshe Eizenberg, Susan G. Telford, and Meng C. Tseng, “Uniform Tungsten Silicide Films Produced by Chemical Vapor Deposition”, United States Patent No. 5,558,910.

4.  Michio Aruga, Moshe Eizenberg, Susan G. Telford, and Meng Chu Tseng, “Uniform Tungsten Silicide Films Produced by Chemical Vapor Deposition”, United States Patent No. 5,643,633.

5. Mei Chang, Moshe Eizenberg, Klaus-Dieter Rinnen, Ramanujapuram A. Srinivas, Susan Weihar Telford, and Jennifer Meng Chu Tseng, “Purge in Silicide Deposition Processes Dichlorosilane; Tungsten Silicide, Flow of Silane”, United States Patent No. 5,780,360.

6. Mei Chang, Moshe Eizenberg, Klaus-Dieter Rinnen, Ramanujapuram A. Srinivas, Susan Telford, and Meng Chu Tseng, “Utilization of SiH4 Soak and Purge in Deposition Processes”, United States Patent No. 5,817,576.

7. Ilan Shalish, Yoram Shapira, and Moshe Eizenberg, “Thermodynamically Stable Contacts for Binary Wide Bandgap Semiconductors”, United States Patent No. 6,410,460.