Gallery

fig1

Correlation between the microstructure and composition depth profiles showing Al diffusion following a high-temperature anneal at HfO2 devices with Al2O3 ultrathin layers. PhD work of Lior Kornblum L. Kornblum et al.,Appl. Phys. Lett. 100, 062907 (2012)

 

 

 

 


fig2

Electrical analysis (capacitance-voltage) showing the effect of the position of an Al2O3 layer in an HfO2 gate stack. These results show this layer is effective only when it is at the bottom of the stack at low temperature, and anywhere in the stack at high temperature. Additional work has revealed the diffusion of Al at high temperatures, that explains this electrical behavior. PhD work of Lior Kornblum L. Kornblum et al., Appl. Phys. Lett. 100, 062907 (2012)

 

 

 


fig3

Spectroscopic analysis (XPS) of the bonding states of the metal Ta. Following a proper calibration this analysis provides a direct evidence of an increase in the effective work function of Ta following a 400C anneal (when in contact with Al2O3). PhD work of Lior Kornblum. L. Kornblum et al., Phys. Rev. B 84, 155317 (2011)

 

 

 

 


fig4

Plan-view SEM secondary electrons imaging of silicide formation. This work is a part of the thermal stability study of Pt-gated epitaxial Gd2O3 advanced MOS devices. PhD work of Dr. Eran Lipp, in collaboration with Leibniz Universität Hannover, Germany. E. Lipp et al., J. Appl. Phys. 106, (2009), 113505

 

 

 

 


fig5

Cross-section TEM imaging of an advanced Ge-based MOS capacitor for future technology. PhD work of Sivan Fadida, in collaboration with imec, Leuven, Belgium. S. Fadida et al., Microelectron. Eng. 88, (2011), 1557

 

 

 

 


fig6

Band alignment of Hf-Zr oxides on top of a Ge substrate passivated by GeO2 and Al2O3. This was determined by XPS. A part of a collaboration with imec Belgium Microelectron. Eng. 88, (2011), 1557

 

 

 


 

Figure1_of_Igor

Typical frequency-dependent C-V characteristics of Au/Ti/Si3N4/In0.53Ga0.47As at 300K: (a) without pre-deposition treatment (b) with NH3 pre-deposition. This work is a study of the elimination of the weak inversion C-V hump in InGaAs using Si3N4 as gate dielectric and NH3 based post-deposition treatment. I. Krylov et al., Appl. Phys. Lett. 99, (2011), 203504


 

Figure2_of_Igor

Typical temperature C-V characteristics (at 10 kHz) (a) and Arrhenius plot of Qhump plotted versus 1/T (b) in Au/Ti/Al2O3/In0.53Ga0.47As gate stacks. This work focuses on the origin of the C-V weak inversion hump in InGaAs based gate stacks. Ph.D. work of Igor Krylov


 

fig7

Cross-section TEM imaging of HfSiON high-k gate dielectric. This study showed a correlation between the dielectric’s composition to the chemical bonding and band structure of the stack. PhD work of Dr. Irena Geppert, in collaboration with Applied Materials, Santa Clara, CA. I. Geppert et al., J. Appl. Phys. 107, (2010), 053701


 

fig8

ross-section TEM imaging of an exotic scandium-oxide dielectric. This work studied the chemical bonding, and interface layer formation in contact with silicon. PhD work of Dr. Irena Geppert, in collaboration with IBM Watson research center. I. Geppert et al., J. Appl. Phys. 108, (2010), 024105